FORMATION OF FERROELECTRIC BAMGF4 FILMS ON GAAS SUBSTRATES

被引：13
|
作者：
AIZAWA, K
ISHIWARA, H
机构：
[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 9B期
关键词：
FERROELECTRIC FILM; BAMGF4; GAAS; SOLID-PHASE CRYSTALLIZATION; CRYSTALLINITY;
D O I：
10.1143/JJAP.31.3232
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optimum conditions to form ferroelectric BaMgF4 films on GaAs substrates are investigated. It has been found in vacuum evaporation of BaMgF4 sources that combination of low-temperature deposition and subsequent high-temperature annealing is effective for forming BaMgF4 films that do not contain BaF2 and MgF2 crystallites. The optimum deposition and annealing temperatures obtained thus far are 300-degrees-C and 600-degrees-C, respectively. Crystallinity and electrical properties of the optimum films are characterized.
引用
收藏
页码：3232 / 3234
页数：3
相关论文
共 50 条
  • [41] Domain growth kinetics and wall strain behavior in BaMgF4 ferroelectric crystal by piezoresponse force microscopy
    Zeng, Huarong
    Shimamura, Kiyoshi
    Villora, Encarnacion G.
    Takekawa, Shunji
    Kitamura, Kenji
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)
  • [42] Local environment of optically active Nd3+ ions in the ultratransparent BaMgF4 ferroelectric crystal
    Munoz-Santiuste, J. E.
    Loro, H.
    Marino, R.
    Goldner, Ph.
    Vasyliev, V.
    Villora, E. G.
    Shimamura, K.
    Molina, P.
    Ramirez, M. O.
    Bausa, L. E.
    PHYSICAL REVIEW B, 2012, 85 (18):
  • [43] Ferroelectric properties of BaMgF4 films grown on Si(100), (111), and Pt(111)/SiO2/Si(100) structures
    Aizawa, Koji
    Ichiki, Tatsuya
    Okamoto, Tomoyuki
    Tokumitsu, Eisuke
    Ishiwara, Hiroshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (2 B): : 1525 - 1530
  • [44] Initial stages of growth of BaMgF4 on (111)-silicon
    Gomez-Uribe, W. A.
    Rodriguez-Velez, M.
    Majumder, S.
    Martinez-Collano, A.
    INTEGRATED FERROELECTRICS, 2007, 91 : 23 - 36
  • [45] Periodically poled BaMgF4 for ultraviolet frequency generation
    Buchter, SC
    Fan, TY
    Liberman, V
    Zayhowski, JJ
    Rothschild, M
    Mason, EJ
    Cassanho, A
    Jenssen, HP
    Burnett, J
    2002 IEEE/LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2002, : 131 - 132
  • [46] Isolated domain structure and its polar-surface asymmetry of ferroelectric BaMgF4 single crystals
    Zeng, Huarong
    Shimamura, Kiyoshi
    Kannan, Chinna Venkadasamy
    Villora, Encarnacion G.
    Takekawa, Shunji
    Kitamura, Kenji
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (9 A): : 6996 - 7001
  • [47] Isolated domain structure and its polar-surface asymmetry of ferroelectric BaMgF4 single crystals
    Zeng, Huarong
    Shimamura, Kiyoshi
    Kannan, Chinna Venkadasamy
    Villora, Encarnacion G.
    Takekawa, Shunji
    Kitamura, Kenji
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (9A): : 6996 - 7001
  • [48] Anisotropic thermal expansion and compressibility in BaMgF4 and BaZnF4
    Posse, J. M.
    Friese, K.
    Grzechnik, A.
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2007, 63 : S185 - S186
  • [49] INTRINSIC LUMINESCENCE OF BALIF3 AND BAMGF4 CRYSTALS
    MELCHAKOV, EN
    PETROVA, MA
    PODKOLZINA, IG
    RODNYI, PA
    TEREKHIN, MA
    OPTIKA I SPEKTROSKOPIYA, 1990, 69 (04): : 807 - 808
  • [50] Domain wall thickness variations of ferroelectric BaMgF4 single crystals in the tip fields of an atomic force microscope
    Zeng, H. R.
    Shimamura, K.
    Villora, E. A. G.
    Takekawa, S.
    Kitamura, K.
    Li, G. R.
    Yin, Q. R.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2008, 2 (03): : 123 - 125
12345