PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SILICON DIOXIDE FILMS .2. INTERACTION BETWEEN AL AND SIO2

被引：0

作者：

MAEDA, K ^{[1
]}

MAKABE, K ^{[1
]}

机构：

[1] FUJITSU LTD,DEPT IC DEVICE ENGN,NAKAHARA KU,KAWASAKI,JAPAN

来源：

DENKI KAGAKU | 1977年 / 45卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：523 / 527

页数：5

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