STRESS AND STRUCTURAL RELAXATION IN METALLOORGANIC CHEMICAL VAPOR-DEPOSITED SIO2-FILMS

被引：13
|
作者：
DESU, SB
机构：
[1] Department of Materials Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 12B期
关键词：
SIO2; FILMS; STRESS RELAXATION; STRUCTURAL CHANGES; MOCVD; DIACETOXY DI-BUTOXY SILANE;
D O I：
10.1143/JJAP.30.L2123
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Stress relaxation of amorphous silica films deposited by low pressure thermal decomposition of diacetoxy di-t-butoxy silane (DADBS) was studied. Significant reduction in film stress along with structural changes were observed at temperatures as low as 600-degrees-C. The activation energy for stress relaxation was found to be 75.8 kJ / mol. The low value of activation energy is attributed to the effect of water which was present in the form of silanol groups. The changes in film stress are attributed in a semi-quantitative manner to the changes in Si-O-Si angle distributions in the film.
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页码：L2123 / L2126
页数：4
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