PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SILICON DIOXIDE FILMS .2. INTERACTION BETWEEN AL AND SIO2

被引：0
|
作者：
MAEDA, K [1 ]
MAKABE, K [1 ]
机构：
[1] FUJITSU LTD,DEPT IC DEVICE ENGN,NAKAHARA KU,KAWASAKI,JAPAN
来源：
DENKI KAGAKU | 1977年 / 45卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：523 / 527
页数：5
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