LASER EMISSION FROM METAL-SEMICONDUCTOR BARRIERS ON PBTE AND PB0.8SN0.2TE

被引：42

|

作者：

NILL, KW

CALAWA, AR

HARMAN, TC

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 16卷 / 10期

关键词：

D O I：

10.1063/1.1653031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：375 / &

相关论文

共 50 条

[31] 电子能谱研究Pb0.8Sn0.2Te表面状态
罗兴华
袁诗鑫
贡树行
分析测试学报, 1982, (00) : 23 - 29
[32] VARIATION OF CARRIER CONCENTRATION IN PB0.8SN0.2TE WITH ANNEALING AND GROWTH TEMPERATURE
PICKERING, C
HARDING, WR
GEEVES, NG
YOUNG, ML
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (06) : L73 - L77
[33] DONOR ACTION OF INDIUM AND BISMUTH IN PB0.8SN0.2TE THIN-FILMS
JAGADISH, C
DAWAR, AL
MATHUR, PC
SOLID STATE COMMUNICATIONS, 1987, 64 (04) : 603 - 604
[34] ACCEPTOR ACTION OF THALLIUM AND ANTIMONY IN PB0.8SN0.2TE THIN-FILMS
JAGADISH, C
DAWAR, AL
SHISHODIA, PK
NIGLI, S
MATHUR, PC
JOURNAL OF MATERIALS SCIENCE LETTERS, 1989, 8 (11) : 1300 - 1301
[35] Anomalous temperature dependence of electrical resistivity in Pb0.8Sn0.2Te thin films
Das, VD
Bahulayan, C
THIN SOLID FILMS, 1996, 274 (1-2) : 55 - 62
[36] THE EFFECT OF ADDITIVES IN ELECTROLYTIC POLISHING OF PB0.8SN0.2TE IN ALKALINE-SOLUTIONS
BREITSAMETER, B
LOWE, H
ELECTROCHIMICA ACTA, 1984, 29 (05) : 643 - 647
[37] Thermoelectric power studies on 1% excess Te doped Pb0.8Sn0.2Te thin films
Damodara Das, V., 1600, JJAP, Minato-ku, Japan (34):
[38] ELECTRON-PROBE MICROANALYSIS OF INDIUM DIFFUSION IN PB0.8SN0.2TE CRYSTALS
BAKIN, AS
DEDEGKAEV, TT
IVANOV, DI
MOSHNIKOV, VA
CHESNOKOVA, DB
FIZIKA TVERDOGO TELA, 1983, 25 (05): : 1515 - 1516
[39] Effect of oxygen adsorption on the electrical resistance of Pb0.8Sn0.2Te thin films
Bahulayan, C
Das, VD
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (05) : 753 - 758
[40] ANALYSIS OF THE COMPOSITION OF THE NEAR-SURFACE DOMAIN OF LASER-DOPED PB0.8SN0.2TE CRYSTALS
GORIN, YA
IVANOVA, OS
SHCHUKAREV, AV
YANKO, GI
INDUSTRIAL LABORATORY, 1986, 52 (08): : 726 - 727

← 1 2 3 4 5 →