LASER EMISSION FROM METAL-SEMICONDUCTOR BARRIERS ON PBTE AND PB0.8SN0.2TE

被引：42
|
作者：
NILL, KW
CALAWA, AR
HARMAN, TC
机构：
来源：
APPLIED PHYSICS LETTERS | 1970年 / 16卷 / 10期
关键词：
D O I：
10.1063/1.1653031
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：375 / &
相关论文
共 50 条
  • [41] 液相外延生长的PbTe/Pb0.8Sn0.2Te制备双色探测器阵列
    昭华
    激光与红外, 1977, (04) : 63 - 65+54
  • [42] Impurity energy states in cadmium-doped Pb0.8Sn0.2Te epitaxial layers
    Vodopyanov, VN
    Volkov, VL
    Kondratenko, MM
    Litvinov, VI
    SEMICONDUCTORS, 1996, 30 (08) : 716 - 719
  • [43] EFFECT OF ANTIMONY ON THE ELECTRICAL-PROPERTIES OF PB0.8SN0.2TE THIN-FILMS
    JAGADISH, C
    DAWAR, AL
    MATHUR, PC
    INFRARED PHYSICS, 1988, 28 (01): : 55 - 60
  • [44] PLANAR PB0.8SN0.2TE PHOTODIODE ARRAY DEVELOPMENT AT NIGHT-VISION LABORATORY
    LOVECCHIO, P
    JASPER, M
    COX, JT
    GARBER, MB
    INFRARED PHYSICS, 1975, 15 (04): : 295 - 301
  • [45] EFFECT OF BISMUTH ON THE ELECTRICAL-PROPERTIES OF PB0.8SN0.2TE THIN-FILMS
    JAGADISH, C
    DAWAR, AL
    NIGLI, S
    CHADHA, GK
    ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1988, 70 (04): : 469 - 472
  • [46] Trends in the kinetic and magnetic properties of Pb0.8Sn0.2Te single crystals of high structural perfection
    Radchenko, MV
    Lashkarev, GV
    Slyn'ko, EI
    Malysheva, AP
    PHYSICS OF THE SOLID STATE, 1999, 41 (10) : 1604 - 1607
  • [47] X-RAY PERFECTION STUDY OF PB0.8SN0.2TE CRYSTALS GROWN BY THE BRIDGMAN METHOD
    PIETSCH, U
    MUHLBERG, M
    BERGER, H
    KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1980, 15 (01): : K7 - K9
  • [48] EFFECT OF INDIUM ON THE ELECTRICAL TRANSPORT-PROPERTIES OF PB0.8SN0.2TE THIN-FILMS
    JAGADISH, C
    DAWAR, AL
    MATHUR, PC
    MATERIALS RESEARCH BULLETIN, 1988, 23 (01) : 99 - 106
  • [49] Pb0．8Sn0．2Te晶体高压相变的X射线衍射研究
    顾惠成
    陈良辰
    鲍忠兴
    李凤英
    高压物理学报, 1996, (03) : 68 - 69+71
  • [50] CARRIER-DENSITY DEPENDENCE OF THE THERMOELECTRIC-POWER OF EPITAXIAL PB0.8SN0.2TE FILMS
    BOCHKAREVA, LV
    ZIMIN, SP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (04): : 421 - 423
12345