LASER EMISSION FROM METAL-SEMICONDUCTOR BARRIERS ON PBTE AND PB0.8SN0.2TE

被引：42

作者：

NILL, KW

CALAWA, AR

HARMAN, TC

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 16卷 / 10期

关键词：

D O I：

10.1063/1.1653031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：375 / &

共 50 条

[11] MAGNETOPHONON RESONANCE IN N-TYPE PB0.8SN0.2TE AND N-TYPE PBTE
MOZHAEV, EA
GEIMAN, KI
MATVEENKO, AV
MASHOVETS, DV
PARFENEV, RV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (12): : 1403 - 1404
[12] HEATING OF EPITAXIAL PB0.8SN0.2TE FILMS BY SHORT LASER-PULSES
GORIN, EA
GENERALOVA, DE
IVANOVA, OS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (01): : 102 - 103
[13] CRYSTALLIZATION FROM VAPOR OF PB0.8SN0.2TE BY THE FORCED FLUX METHOD
OMALY, J
RHAJERISON, J
CADORET, R
ANNALES DE CHIMIE-SCIENCE DES MATERIAUX, 1988, 13 (06): : 489 - 497
[14] DIFFUSION OF CHALCOGENS IN THE PB0.8SN0.2TE SOLID-SOLUTION
SIMIRSKII, YN
FIRSOVA, LP
INORGANIC MATERIALS, 1984, 20 (02) : 293 - 294
[15] DIFFUSION OF GALLIUM IN THE SOLID-SOLUTIONS PB0.8SN0.2TE AND PBTE0.92SE0.08
SIMIRSKAYA, GP
FIRSOVA, LP
INORGANIC MATERIALS, 1985, 21 (09) : 1287 - 1289
[16] DIFFUSION OF INDIUM IN PB0.8SN0.2TE SOLID-SOLUTIONS
PETUKHOVA, NN
CHESNOKOVA, DB
YASKOV, DA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (09): : 1048 - 1051
[17] DEFECT STRUCTURE OF CD-DOPED PB0.8SN0.2TE
VYDYANATH, HR
JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) : 5003 - 5009
[18] GALVANOMAGNETIC AND THERMOMAGNETIC PROPERTIES OF EPITAXIAL PB0.8SN0.2TE FILMS
BOCHKAREVA, LV
ZIMIN, SP
SIZYK, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (09): : 966 - 969
[19] EFFECT OF INTRINSIC DEFECT CONCENTRATION ON IN DIFFUSION IN PB0.8SN0.2TE
BESTAEV, MV
DEDEGKAEV, TT
MOSHNIKOV, AA
FIZIKA TVERDOGO TELA, 1985, 27 (06): : 1868 - 1870
[20] PBTE-SNTE MUTUAL DIFFUSION-COEFFICIENT AT JUST ABOVE THE PB0.8SN0.2TE SOLIDUS TEMPERATURE
KINOSHITA, K
SUGII, K
JOURNAL OF CRYSTAL GROWTH, 1984, 67 (02) : 375 - 379

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