CRYSTALLIZATION FROM VAPOR OF PB0.8SN0.2TE BY THE FORCED FLUX METHOD

被引：0
|
作者：
OMALY, J
RHAJERISON, J
CADORET, R
机构：
来源：
ANNALES DE CHIMIE-SCIENCE DES MATERIAUX | 1988年 / 13卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：489 / 497
页数：9
相关论文
共 50 条
  • [1] Distribution of Components in Pb0.8Sn0.2Te Crystals
    R. V. Sergeev
    S. G. Dorofeev
    T. A. Kuznetsova
    V. F. Kozlovskii
    O. I. Tananaeva
    Inorganic Materials, 2003, 39 : 793 - 797
  • [2] ION-IMPLANTATION OF PB0.8SN0.2TE
    BIS, RF
    HOUSTON, B
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1546 - 1548
  • [3] Distribution of components in Pb0.8Sn0.2Te crystals
    Sergeev, RV
    Dorofeev, SG
    Kuznetsova, TA
    Kozlovskii, VF
    Tananaeva, OI
    INORGANIC MATERIALS, 2003, 39 (08) : 793 - 797
  • [4] DIFFUSION OF CHALCOGENS IN THE PB0.8SN0.2TE SOLID-SOLUTION
    SIMIRSKII, YN
    FIRSOVA, LP
    INORGANIC MATERIALS, 1984, 20 (02) : 293 - 294
  • [5] DIFFUSION OF INDIUM IN PB0.8SN0.2TE SOLID-SOLUTIONS
    PETUKHOVA, NN
    CHESNOKOVA, DB
    YASKOV, DA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (09): : 1048 - 1051
  • [6] DEFECT STRUCTURE OF CD-DOPED PB0.8SN0.2TE
    VYDYANATH, HR
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) : 5003 - 5009
  • [7] PHOTOCONDUCTIVE PROPERTIES OF PBTE AND PB0.8SN0.2TE EPITAXIAL FILMS
    NUCCIOTTI, A
    MASCHERETTI, P
    SAMOGGIA, G
    DESTEFAN.P
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (01): : 193 - +
  • [8] EFFECT OF INTRINSIC DEFECT CONCENTRATION ON IN DIFFUSION IN PB0.8SN0.2TE
    BESTAEV, MV
    DEDEGKAEV, TT
    MOSHNIKOV, AA
    FIZIKA TVERDOGO TELA, 1985, 27 (06): : 1868 - 1870
  • [9] GALVANOMAGNETIC AND THERMOMAGNETIC PROPERTIES OF EPITAXIAL PB0.8SN0.2TE FILMS
    BOCHKAREVA, LV
    ZIMIN, SP
    SIZYK, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (09): : 966 - 969
  • [10] 电子能谱研究Pb0.8Sn0.2Te表面状态
    罗兴华
    袁诗鑫
    贡树行
    分析测试通报, 1982, (00) : 23 - 29
12345