Effect of oxygen adsorption on the electrical resistance of Pb0.8Sn0.2Te thin films

被引：0
|
作者：
Bahulayan, C [1 ]
Das, VD [1 ]
机构：
[1] INDIAN INST TECHNOL,DEPT PHYS,THIN FILM LAB,MADRAS 600036,TAMIL NADU,INDIA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 05期
关键词：
D O I：
10.1088/0268-1242/11/5/017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin films of Pb0.8Sn0.2Te of varying thicknesses deposited by the flash evaporation method showed considerable change in resistance with time when exposed to oxygen or atmosphere. The change in resistance is found to decrease with increase in thickness and with increase in substrate temperature. The observed behaviour is explained by an oxygen adsorption model, which is further supported by the x-ray photoelectron spectroscopy (XPS) of the films.
引用
收藏
页码：753 / 758
页数：6
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