FORMATION OF STACKING-FAULTS IN WEAKLY DOPED SILICON EPITAXIAL LAYERS

被引：0

作者：

KUZNETSOV, VP ^{[1
]}

ANDREEV, AY ^{[1
]}

ABROSIMOVA, LN ^{[1
]}

TOLOMASOV, VA ^{[1
]}

机构：

[1] GORKI ENGN PHYS RES INST,GORKI,USSR

来源：

INORGANIC MATERIALS | 1986年 / 22卷 / 11期

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D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1663 / 1664

页数：2

共 50 条

[1] STACKING-FAULTS IN SILICON EPITAXIAL LAYERS
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[2] MODEL FOR FORMATION OF STACKING-FAULTS IN SILICON
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[8] THE EFFECT OF POINT-DEFECTS ON SILICON EPITAXIAL STACKING-FAULTS
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[9] PRE-EPITAXIAL AND POST-EPITAXIAL GETTERING OF STACKING-FAULTS IN SILICON
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