OXIDATION OF SILICON WITHOUT FORMATION OF STACKING-FAULTS

被引：24

作者：

MURARKA, SP ^{[1
]}

LEVINSTEIN, HJ ^{[1
]}

MARCUS, RB ^{[1
]}

WAGNER, RS ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 09期

关键词：

D O I：

10.1063/1.324241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4001 / 4003

页数：3

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