FORMATION OF STACKING-FAULTS IN WEAKLY DOPED SILICON EPITAXIAL LAYERS

被引：0
|
作者：
KUZNETSOV, VP [1 ]
ANDREEV, AY [1 ]
ABROSIMOVA, LN [1 ]
TOLOMASOV, VA [1 ]
机构：
[1] GORKI ENGN PHYS RES INST,GORKI,USSR
来源：
INORGANIC MATERIALS | 1986年 / 22卷 / 11期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1663 / 1664
页数：2
相关论文
共 50 条
  • [21] IDENTIFICATION, ANNIHILATION, AND SUPPRESSION OF NUCLEATION SITES RESPONSIBLE FOR SILICON EPITAXIAL STACKING-FAULTS
    ROZGONYI, GA
    DEYSHER, RP
    PEARCE, CW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) : 1910 - 1915
  • [22] IDENTIFICATION, ANNIHILATION, AND SUPPRESSION OF NUCLEATION SITES RESPONSIBLE FOR SILICON EPITAXIAL STACKING-FAULTS
    ROZGONYI, GA
    DEYSHER, RP
    PEARCE, CW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C262 - C262
  • [23] ELECTRICALLY ACTIVE STACKING-FAULTS IN SILICON
    MATARE, HF
    RAVI, KV
    VARKER, CJ
    VOLK, CE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1790 - 1791
  • [24] STUDIES OF THE FORMATION AND CONTROL OF STACKING FAULTS IN EPITAXIAL SILICON
    WHITTEN, WN
    MCNAMARA, JE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (03) : C61 - C61
  • [25] STACKING-FAULTS AND SUBSTRUCTURE IN GAAS-(GA, AL) AS HETERO-EPITAXIAL LAYERS
    DUTT, BV
    MAHAJAN, S
    ROEDEL, RJ
    MILLER, DC
    SCHWARTZ, GP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C388 - C388
  • [26] STACKING FAULTS IN EPITAXIAL SILICON
    QUEISSER, HJ
    FINCH, RH
    WASHBURN, J
    JOURNAL OF APPLIED PHYSICS, 1962, 33 (04) : 1536 - &
  • [27] ON THE FORMATION OF STACKING-FAULTS IN SILICON IMPLANTED WITH HIGH-DOSES OF OXYGEN
    KOMNINOU, P
    KARAKOSTAS, T
    STOEMENOS, J
    JAUSSAUD, C
    MARGAIL, J
    JOURNAL OF MATERIALS SCIENCE, 1987, 22 (07) : 2515 - 2520
  • [28] A MODEL FOR THE FORMATION OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON
    SADAMITSU, S
    OKUI, M
    SUEOKA, K
    MARSDEN, K
    SHIGEMATSU, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (5B): : L597 - L599
  • [29] ELECTRON TRANSMISSION THROUGH SILICON STACKING-FAULTS
    STILES, MD
    HAMANN, DR
    PHYSICAL REVIEW B, 1990, 41 (08): : 5280 - 5282
  • [30] THEORETICAL-STUDY OF STACKING-FAULTS IN SILICON
    CHOU, MY
    COHEN, ML
    LOUIE, SG
    PHYSICAL REVIEW B, 1985, 32 (12): : 7979 - 7987
12345