FORMATION OF STACKING-FAULTS IN WEAKLY DOPED SILICON EPITAXIAL LAYERS

被引：0

作者：

KUZNETSOV, VP ^{[1
]}

ANDREEV, AY ^{[1
]}

ABROSIMOVA, LN ^{[1
]}

TOLOMASOV, VA ^{[1
]}

机构：

[1] GORKI ENGN PHYS RES INST,GORKI,USSR

来源：

INORGANIC MATERIALS | 1986年 / 22卷 / 11期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1663 / 1664

页数：2

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