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- [4] THE EFFECT OF POINT-DEFECTS ON SILICON EPITAXIAL STACKING-FAULTSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : C355 - C355SPARKS, DR
- [5] FORMATION OF STACKING-FAULTS IN WEAKLY DOPED SILICON EPITAXIAL LAYERSINORGANIC MATERIALS, 1986, 22 (11) : 1663 - 1664KUZNETSOV, VPANDREEV, AYABROSIMOVA, LNTOLOMASOV, VA
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- [7] SEM OBSERVATION AND CONTRAST MECHANISM OF STACKING-FAULTS IN AN EPITAXIAL SILICON LAYERJOURNAL OF APPLIED PHYSICS, 1974, 45 (09) : 3732 - 3737KATO, TKOYAMA, HMATSUKAWA, TSHIMIZU, R
- [8] NUCLEATION AND GROWTH OF STACKING-FAULTS IN EPITAXIAL SILICON DURING THERMAL OXIDATIONJOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1302 - 1306HSIEH, CMMAHER, DM
- [9] ELECTRICAL-ACTIVITY OF EPITAXIAL STACKING-FAULTSJOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 48 - 48MARCUS, RBROBINSON, MSHENG, TTHASZKO, SEMURARKA, SPKATZ, LE
- [10] STACKING FAULTS IN EPITAXIAL SILICONJOURNAL OF APPLIED PHYSICS, 1962, 33 (04) : 1536 - &QUEISSER, HJFINCH, RHWASHBURN, J