PRE-EPITAXIAL AND POST-EPITAXIAL GETTERING OF STACKING-FAULTS IN SILICON

被引：0
|
作者：
CHEN, MC
SILVESTRI, VJ
机构：
[1] NATL CHIAO TUNG UNIV,COLL ENGN,HSINCHU,TAIWAN
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C368 / C368
页数：1
相关论文
共 50 条
  • [31] STACKING FAULTS IN EPITAXIAL MATERIAL
    JACCODINE, RJ
    APPLIED PHYSICS LETTERS, 1963, 2 (11) : 201 - 202
  • [32] STACKING-FAULTS IN (100) EPITAXIAL SILICON CAUSED BY HF AND THERMAL OXIDATION AND EFFECTS ON P-N-JUNCTIONS
    DRUM, CM
    VANGELDE.W
    JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) : 4465 - &
  • [33] SHEAR AND TWIN-TYPE STACKING FAULTS IN EPITAXIAL SILICON
    MENDELSON, S
    JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) : 2477 - +
  • [34] MODEL FOR FORMATION OF STACKING-FAULTS IN SILICON
    MAHAJAN, S
    ROZGONYI, GA
    BRASEN, D
    APPLIED PHYSICS LETTERS, 1977, 30 (02) : 73 - 75
  • [35] STACKING-FAULTS AND SUBSTRUCTURE IN GAAS-(GA, AL) AS HETERO-EPITAXIAL LAYERS
    DUTT, BV
    MAHAJAN, S
    ROEDEL, RJ
    MILLER, DC
    SCHWARTZ, GP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C388 - C388
  • [36] SHRINKAGE AND ANNIHILATION OF STACKING-FAULTS IN SILICON
    SUGITA, Y
    SHIMIZU, H
    YOSHINAKA, A
    AOSHIMA, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 44 - 46
  • [37] ELECTRICALLY ACTIVE STACKING-FAULTS IN SILICON
    MATARE, HF
    RAVI, KV
    VARKER, CJ
    VOLK, CE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1790 - 1791
  • [38] Strain and gettering in epitaxial silicon wafers
    Kirscht, FG
    Shabani, MB
    Yoshimi, T
    Kim, SB
    Snegirev, B
    Wang, C
    Williamson, L
    Takashima, K
    Taylor, P
    Lange, D
    SOLID STATE PHENOMENA, 1997, 57-8 : 355 - 363
  • [39] DISCREPANCIES IN NUMBER OF STACKING FAULTS REVEALED BY VARIOUS METHODS IN EPITAXIAL SILICON
    DIONNE, G
    JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3417 - &
  • [40] Formation and annihilation of epitaxial stacking faults generated from pre-existing nucleation sites in silicon
    Cho, CR
    Noh, KY
    Lee, DH
    Kim, YS
    Ko, SW
    Kim, CW
    Kim, DH
    Son, CB
    Kim, SJ
    Cho, DH
    Choi, JJ
    Kim, DJ
    Bae, KM
    Rozgonyi, GA
    HIGH PURITY SILICON VI, 2000, 4218 : 201 - 208
12345