INTERFACIAL PROPERTIES OF METAL-SILICON OXIDE-METAL STRUCTURES IN RELATION TO THE NONSTOICHIOMETRY OF A THIN-FILM DIELECTRIC

被引：3
|
作者：
PISARKIEWICZ, T
机构：
来源：
THIN SOLID FILMS | 1980年 / 67卷 / 01期
关键词：
D O I：
10.1016/0040-6090(80)90286-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：49 / 55
页数：7
相关论文
共 50 条
  • [31] INTERFACIAL COUPLING BETWEEN A MAGNETIC THIN-FILM AND A NORMAL METAL
    HURDEQUINT, H
    DUNIFER, G
    JOURNAL DE PHYSIQUE, 1988, 49 (C-8): : 1717 - 1718
  • [32] TRANSITION PROCESSES IN MNOP (METAL-SILICON NITRIDE SILICON OXIDE-SEMICONDUCTOR) STRUCTURES AND THEIR RELATION WITH THE INSTABILITY OF ELECTRIC CHARACTERISTICS OF DEVICES
    AGAFONOV, AI
    PLOTNIKOV, AF
    SELEZNEV, VN
    ZHURNAL TEKHNICHESKOI FIZIKI, 1983, 53 (06): : 1089 - 1095
  • [33] Towards complementary metal-oxide-silicon thin-film devices with a new structure
    Gautier, G
    Viana, CE
    Crand, S
    Rogel, R
    Morimoto, NI
    Bonnaud, O
    POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 2003, 93 : 429 - 434
  • [34] Metal Oxide Thin-Film Heterojunctions for Photovoltaic Applications
    Nordseth, Ornulf
    Kumar, Raj
    Bergum, Kristin
    Fara, Laurentiu
    Dumitru, Constantin
    Craciunescu, Dan
    Dragan, Florin
    Chilibon, Irinela
    Monakhov, Edouard
    Foss, Sean Erik
    Svensson, Bengt Gunnar
    MATERIALS, 2018, 11 (12)
  • [35] HYDROGEN AND AMMONIA RESPONSE OF METAL-SILICON DIOXIDE-SILICON STRUCTURES WITH THIN PLATINUM GATES
    SPETZ, A
    ARMGARTH, M
    LUNDSTROM, I
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) : 1274 - 1283
  • [36] Interdiffusion at metal/oxide interfaces studied in thin-film structures with AES depth profiling
    Zalar, A
    Hofmann, S
    Baretzky, B
    Dettenwanger, F
    Panjan, P
    INTERFACIAL SCIENCE IN CERAMIC JOINING, 1998, 58 : 223 - 232
  • [37] Calculation of the electrostriction effect in thin-film metal-ferroelectric-metal structures
    Bogomol'nyi, VM
    TECHNICAL PHYSICS, 1999, 44 (07) : 846 - 849
  • [38] Calculation of the electrostriction effect in thin-film metal-ferroelectric-metal structures
    V. M. Bogomol’nyi
    Technical Physics, 1999, 44 : 846 - 849
  • [39] TANTALUM OXIDE-SILICON OXIDE DUPLEX DIELECTRIC THIN-FILM CAPACITORS
    KELLER, HN
    KEMMERER, CT
    NAEGELE, CL
    IEEE TRANSACTIONS ON PARTS MATERIALS AND PACKAGING, 1967, PMP3 (03): : 97 - &
  • [40] INVESTIGATION OF THIN-FILM DIODE STRUCTURES OF METAL - CHALCOGENIDE GLASS - METAL TYPE
    ALTUNYAN, SA
    STAFEEV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (03): : 431 - &
12345