INVESTIGATION OF THE DIFFUSION LENGTH IN VARIABLE-GAP ALXGA1-XAS SOLID-SOLUTIONS

被引：0
|
作者：
KESAMANLY, FP
KOVALENKO, VF
MARONCHUK, IE
PEKA, GP
SHEPEL, LG
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1978年 / 12卷 / 07期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：780 / 782
页数：3
相关论文
共 50 条
  • [31] PHOTOLUMINESCENCE OF TYPE ALXGA1-XAS SOLID SOLUTIONS
    ALFEROV, ZI
    GARBUZOV, DZ
    NINUA, OA
    TROFIM, VG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (06): : 982 - &
  • [32] PHOTOLUMINESCENCE INVESTIGATION OF THE COMPOSITION DEPENDENCE OF THE PARAMETERS OF VARIABLE-GAP AlxGa1 - x As SOLID SOLUTIONS.
    Bazyk, A.I.
    Kovalenko, V.F.
    Peka, G.P.
    Petryakov, V.A.
    Soviet physics. Semiconductors, 1981, 15 (07): : 786 - 789
  • [33] PENETRATION OF ALUMINUM INTO ALXGA1-XAS SOLID-SOLUTIONS PREPARED FROM THE GAS-PHASE
    SINITSYN, MA
    YAVICH, BS
    INORGANIC MATERIALS, 1988, 24 (11) : 1633 - 1635
  • [34] INVESTIGATION OF PHOTOLUMINESCENCE AND LASER-EMISSION PARAMETERS UNDER ELECTRON EXCITATION OF ALXGA1-XAS DOPED SOLID-SOLUTIONS
    KRASAVINA, EM
    KRYUKOVA, IV
    MATVEENKO, EV
    PETRUSHENKO, YV
    KVANTOVAYA ELEKTRONIKA, 1974, 1 (12): : 2602 - 2607
  • [35] Excitonic polaritons in semiconductor solid solutions AlxGa1-xAs
    Seisyan, RP
    Kosobukin, VA
    Vaganov, SA
    Markosov, MA
    Shamirzaev, TS
    Zhuravlev, KS
    Bakarov, AK
    Toropov, AI
    FOURTH INTERNATIONAL CONFERENCE ON PHYSICS OF LIGHT-MATTER COUPLING IN NANOSTRUCTURES (PLMCN4), 2005, 2 (02): : 900 - 905
  • [36] CHARACTERISTICS OF THE BEHAVIOR OF COPPER IMPURITIES AND RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN VARIABLE-GAP AlxGa1 - xAs:Cu SOLID SOLUTIONS.
    Vasilenko, N.D.
    Gorshkov, L.I.
    Kovalenko, V.F.
    Maronchuk, I.E.
    Peka, G.P.
    Shepel', L.G.
    Soviet physics. Semiconductors, 1980, 14 (02): : 193 - 196
  • [37] INVESTIGATION OF THE BAND PARAMETERS OF ALXGA1-XAS SOLID-SOLUTIONS USING ABSORPTION-SPECTRA IN QUANTIZING MAGNETIC-FIELDS
    EMLIN, RV
    ZVEREV, LP
    RUT, OE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (02): : 163 - 165
  • [38] DIFFUSION PROPERTIES OF MG IN ALXGA1-XAS
    MUKAI, S
    KANEKO, Y
    NUKUI, T
    MORI, M
    WATANABE, M
    ITOH, H
    YAJIMA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (01): : L1 - L3
  • [39] INVESTIGATION OF MOCVD GROWTH OF ALXGA1-XAS/GAAS AND ALXGA1-XAS/GAAS/ALXGA1-XAS/GAAS MULTILAYER STRUCTURES WITH HIGH AL CONTENT
    GAO, HK
    YUN, F
    ZHANG, JK
    HOU, X
    GONG, P
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 428 - 433
  • [40] DEEP DONOR LEVEL OF SI IN ALXGA1-XAS SOLID-SOLUTIONS PREPARED FROM THE VAPOR-PHASE
    MASHEVSKII, AG
    SINITSYN, MA
    FEDOROVA, OM
    YAVICH, BS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (10): : 1204 - 1205
12345