Excitonic polaritons in semiconductor solid solutions AlxGa1-xAs

被引：15

作者：

Seisyan, RP ^{[1
]}

Kosobukin, VA ^{[1
]}

Vaganov, SA ^{[1
]}

Markosov, MA ^{[1
]}

Shamirzaev, TS ^{[1
]}

Zhuravlev, KS ^{[1
]}

Bakarov, AK ^{[1
]}

Toropov, AI ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

FOURTH INTERNATIONAL CONFERENCE ON PHYSICS OF LIGHT-MATTER COUPLING IN NANOSTRUCTURES (PLMCN4) | 2005年 / 2卷 / 02期

关键词：

D O I：

10.1002/pssc.200460338

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The absorption edge spectra and excitonic absorption index integrated over frequency were measured for semiconductor solid solutions AlxGa1-xAs with large concentrations of substituting Al (x = 0.15 and 0.21). For the ground-state exciton the temperature dependence of integral absorption was established to possess features characteristic of exciton-polaritons in a quasi-homogeneous semiconductor with spatial dispersion. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：900 / 905

页数：6

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