Excitonic polaritons in semiconductor solid solutions AlxGa1-xAs

被引：15
|
作者：
Seisyan, RP [1 ]
Kosobukin, VA [1 ]
Vaganov, SA [1 ]
Markosov, MA [1 ]
Shamirzaev, TS [1 ]
Zhuravlev, KS [1 ]
Bakarov, AK [1 ]
Toropov, AI [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
FOURTH INTERNATIONAL CONFERENCE ON PHYSICS OF LIGHT-MATTER COUPLING IN NANOSTRUCTURES (PLMCN4) | 2005年 / 2卷 / 02期
关键词：
D O I：
10.1002/pssc.200460338
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The absorption edge spectra and excitonic absorption index integrated over frequency were measured for semiconductor solid solutions AlxGa1-xAs with large concentrations of substituting Al (x = 0.15 and 0.21). For the ground-state exciton the temperature dependence of integral absorption was established to possess features characteristic of exciton-polaritons in a quasi-homogeneous semiconductor with spatial dispersion. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页码：900 / 905
页数：6
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