共 50 条
- [41] EXCITONS IN INDIRECT-GAP ALXGA1-XAS SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (11) : 1966 - 1972
- [42] ELECTRON-MOBILITY IN VARIABLE-GAP EPITAXIAL N-TYPE ALXGA1-XAS FILMS WITH HETEROVALLEY GAMMA-X JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (03): : 379 - 380
- [43] DEPENDENCE OF EFFICIENCY OF RADIATIVE TRANSITIONS ON COMPOSITION OF DIRECT-GAP N-TYPE AND P-TYPE ALXGA1-XAS SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (03): : 278 - 281
- [44] INVESTIGATION OF THE CATHODOLUMINESCENCE OF VARIABLE-COMPOSITION AlxGa1 - xAs SOLID SOLUTIONS. Soviet physics. Semiconductors, 1983, 17 (11): : 1284 - 1286
- [46] INVESTIGATION OF DEPENDENCE OF LUMINESCENCE EMITTED BY N-TYPE AND P-TYPE GAPXAS1-X AND ALXGA1-XAS SOLID-SOLUTIONS ON THEIR COMPOSITION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1620 - 1625
- [47] INVESTIGATION OF SOME PHYSICAL-PROPERTIES OF GAAS MONOCRYSTALS AND ALXGA1-XAS SOLID-SOLUTIONS BY PHOTO-LUMINESCENCE AND CATHODE-LUMINESCENCE METHODS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1977, (03): : 117 - 121
- [48] Pressure and composition effects on the gap properties of AlxGa1-xAs 1600, American Inst of Physics, Woodbury, NY, USA (74):
- [50] EFFECT OF DOPING IMPURITY ON MECHANICAL AND RECOMBINATION PARAMETERS OF GRADE-BAND-GAP SOLID ALXGA1-XAS SOLUTIONS UKRAINSKII FIZICHESKII ZHURNAL, 1982, 27 (04): : 568 - 572