HIGH INTEGRITY THIN SILICON-OXIDES FROM CVD OF TETRAETHYLORTHOSILICATE

被引：0
|
作者：
MONKOWSKI, JR
LOGAN, MA
FREEMAN, DW
BROWN, GA
RUGGLES, GA
机构：
[1] MONKOWSKI RHINE INC,SAN DIEGO,CA 92126
[2] TEXAS INSTRUMENTS INC,SEMICOND PROC LAB,DALLAS,TX 75265
[3] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C481 / C481
页数：1
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