HIGH INTEGRITY THIN SILICON-OXIDES FROM CVD OF TETRAETHYLORTHOSILICATE

被引：0

作者：

MONKOWSKI, JR

LOGAN, MA

FREEMAN, DW

BROWN, GA

RUGGLES, GA

机构：

[1] MONKOWSKI RHINE INC,SAN DIEGO,CA 92126

[2] TEXAS INSTRUMENTS INC,SEMICOND PROC LAB,DALLAS,TX 75265

[3] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C481 / C481

页数：1

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