THE ELECTRICAL ASSESSMENT OF P-ISOTYPE SI/SIGE/SI HETEROSTRUCTURES GROWN BY MBE

被引：5
|
作者：
BRIGHTEN, JC [1 ]
KUBIAK, RA [1 ]
PHILLIPS, PJ [1 ]
WHALL, TE [1 ]
PARKER, EHC [1 ]
HAWKINS, ID [1 ]
PEAKER, AR [1 ]
机构：
[1] UMIST,CTR ELECTR MAT,MANCHESTER M60 1QD,ENGLAND
来源：
THIN SOLID FILMS | 1992年 / 222卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(92)90050-L
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Si/Si0.9Ge0.1 heterostructures have been analyzed using the Capacitance-Voltage (C-V) technique described by Kroemer. A valence band offset of approximately 70 +/- 10 meV was deduced, in good agreement with that predicted by other methods. The significant deep level populations revealed by deep level transient spectroscopy and variable temperature C-V methods have a comparatively small effect upon the deduced offset.
引用
收藏
页码：116 / 119
页数：4
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