Strain relaxation in MBE-grown Si1-xGex/Si(100) heterostructures by annealing

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[1] Yaguchi, Hiroyuki
[2] Fujita, Ken
[3] Fukatsu, Susumu
[4] Shiraki, Yasuhiro
[5] Ito, Ryoichi
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Yaguchi, Hiroyuki | 1600年 / 30期
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Semiconductor devices;
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