THE ELECTRICAL ASSESSMENT OF P-ISOTYPE SI/SIGE/SI HETEROSTRUCTURES GROWN BY MBE

被引：5

作者：

BRIGHTEN, JC ^{[1
]}

KUBIAK, RA ^{[1
]}

PHILLIPS, PJ ^{[1
]}

WHALL, TE ^{[1
]}

PARKER, EHC ^{[1
]}

HAWKINS, ID ^{[1
]}

PEAKER, AR ^{[1
]}

机构：

[1] UMIST,CTR ELECTR MAT,MANCHESTER M60 1QD,ENGLAND

来源：

THIN SOLID FILMS | 1992年 / 222卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90050-L

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si/Si0.9Ge0.1 heterostructures have been analyzed using the Capacitance-Voltage (C-V) technique described by Kroemer. A valence band offset of approximately 70 +/- 10 meV was deduced, in good agreement with that predicted by other methods. The significant deep level populations revealed by deep level transient spectroscopy and variable temperature C-V methods have a comparatively small effect upon the deduced offset.

引用

页码：116 / 119

页数：4

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