BORDER TRAPS IN MOS DEVICES

被引：305
|
作者：
FLEETWOOD, DM
机构：
[1] Sandia National Laboratories., Dept., NM, 87185–5800., 1332, Albuquerque
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 02期
关键词：
D O I：
10.1109/23.277495
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is recommended that the terminology for oxide charges developed in 1979 by the Deal committee be updated to include near-interfacial oxide traps that communicate with the underlying Si and that these defects collectively be called "border traps." Justification for this nomenclature is presented and defining features of border traps are discussed. Border traps play an important role in determining low-frequency (1/f) noise levels in metal-oxide-semiconductor (MOS) transistors and also appear to have been observed in recent spin-dependent recombination studies on irradiated devices at microwave frequencies. This terminology is intended to add focus to discussions of defect type and location in MOS structures.
引用
收藏
页码：269 / 271
页数：3
相关论文
共 50 条
  • [21] Thermal- and radiation-induced interface traps in MOS devices
    Sogoyan, AV
    Cherepko, SV
    Pershenkov, VS
    Rogov, VI
    Ulimov, VN
    Emelianov, VV
    RADECS 97: FOURTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1998, : 69 - 72
  • [22] Characterization of interface traps in MOS devices using photonic illumination method
    Lee, YN
    Hong, B
    Roh, Y
    Vikulov, VA
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S681 - S684
  • [23] MOLECULAR-HYDROGEN, E' CENTER HOLE TRAPS, AND RADIATION-INDUCED INTERFACE TRAPS IN MOS DEVICES
    CONLEY, JF
    LENAHAN, PM
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (06) : 1335 - 1340
  • [24] Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry
    Carbonetto, Sebastian H.
    Garcia Inza, Mariano A.
    Lipovetzky, Jose
    Redin, Eduardo G.
    Sambuco Salomone, Lucas
    Faigon, Adrian
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (06) : 3348 - 3353
  • [25] Theoretical insights into the impact of border and interface traps on hysteresis in monolayer MoS2 FETs
    Ghosh, Rittik
    Provias, Alexandros
    Karl, Alexander
    Wilhelmer, Christoph
    Knobloch, Theresia
    Davoudi, Mohammad Rasool
    Sattari-Esfahlan, Seyed Mehdi
    Waldhoer, Dominic
    Grasser, Tibor
    MICROELECTRONIC ENGINEERING, 2025, 299
  • [26] Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance-voltage analysis
    Zhao, Peng
    Khosravi, Ava
    Azcatl, Angelica
    Bolshakov, Pavel
    Mirabelli, Gioele
    Caruso, Enrico
    Hinkle, Christopher L.
    Hurley, Paul K.
    Wallace, Robert M.
    Young, Chadwin D.
    2D MATERIALS, 2018, 5 (03):
  • [27] Border Traps in Ge/III-V Channel Devices: Analysis and Reliability Aspects
    Simoen, Eddy
    Lin, Dennis Han-Chung
    Alian, A.
    Brammertz, G.
    Merckling, C.
    Mitard, J.
    Claeys, Cor
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2013, 13 (04) : 444 - 455
  • [28] Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices
    Fleetwood, Daniel M.
    Zhang, En Xia
    Schrimpf, Ronald D.
    Pantelides, Sokrates T.
    Bonaldo, Stefano
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2024, 71 (04) : 555 - 568
  • [29] Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices
    Ramanan, Narayanan
    Lee, Bongmook
    Misra, Veena
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (02) : 546 - 553
  • [30] Influence of Border Traps on the Determination of the Minimum Temperature Coefficient Current in High Sensitivity MOS Radiation Dosimeters
    Sarrabayrouse, G.
    Gavelle, M.
    Siskos, S.
    2009 3RD INTERNATIONAL CONFERENCE ON SIGNALS, CIRCUITS AND SYSTEMS (SCS 2009), 2009, : 258 - +
12345