Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry

被引：20

作者：

Carbonetto, Sebastian H. ^{[1
]}

Garcia Inza, Mariano A. ^{[1
]}

Lipovetzky, Jose ^{[1
]}

Redin, Eduardo G. ^{[1
]}

Sambuco Salomone, Lucas ^{[1
]}

Faigon, Adrian ^{[1
,2
,3
]}

机构：

[1] Univ Buenos Aires, Fac Ingn, Dept Fis, Device Phys Microelect Lab, Buenos Aires, DF, Argentina

[2] Univ Buenos Aires, Fac Ingn, INTECIN, Buenos Aires, DF, Argentina

[3] Natl Res Council Argentina CONICET, Buenos Aires, DF, Argentina

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 06期

关键词：

Dosimetry; ionizing radiation sensors; MOS devices; radiation effects; temperature;

D O I：

10.1109/TNS.2011.2170430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that the error compensation impoverishes with absorbed dose. Finally, an explanation and analytic expression for the shifts in the ZTC current with irradiation based on the interface traps creation is proposed and verified with experimental data.

引用

页码：3348 / 3353

页数：6

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