PROCESSING AND CHARACTERIZATION OF A PBT DEVICE USING SELF-ALIGNED COSI2

被引：1

作者：

HATZIKONSTANTINIDOU, S ^{[1
]}

NILSSON, HE ^{[1
]}

FROJDH, C ^{[1
]}

PETERSSON, CS ^{[1
]}

KAPLAN, W ^{[1
]}

机构：

[1] IND MICROELECTR CTR,S-16421 KISTA,SWEDEN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 12期

关键词：

D O I：

10.1088/0268-1242/9/12/019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication of an etched-groove permeable base transistor (PBT) test structure on silicon, using self-aligned CoSi2 for the base and emitter contacts. This process is fully compatible with a standard CMOS process. The structure has been characterized and simulated. The simulation results are compared with the measured characteristics of the fabricated device.

引用

页码：2272 / 2277

页数：6

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