PROCESSING AND CHARACTERIZATION OF A PBT DEVICE USING SELF-ALIGNED COSI2

被引：1

作者：

HATZIKONSTANTINIDOU, S ^{[1
]}

NILSSON, HE ^{[1
]}

FROJDH, C ^{[1
]}

PETERSSON, CS ^{[1
]}

KAPLAN, W ^{[1
]}

机构：

[1] IND MICROELECTR CTR,S-16421 KISTA,SWEDEN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 12期

关键词：

D O I：

10.1088/0268-1242/9/12/019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication of an etched-groove permeable base transistor (PBT) test structure on silicon, using self-aligned CoSi2 for the base and emitter contacts. This process is fully compatible with a standard CMOS process. The structure has been characterized and simulated. The simulation results are compared with the measured characteristics of the fabricated device.

引用

页码：2272 / 2277

页数：6

共 50 条

[21] Self-ordering of CoSi2 precipitates and epitaxial layer growth of CoSi2 on Si(100)
Mantl, S.
Hacke, M.
Bay, H.L.
Kappius, L.
Mesters, St.
Thin Solid Films, 1998, 321 : 251 - 255
[22] CHARACTERIZATION OF THE SELF-ALIGNED TISI2 PROCESS
LAU, CK
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C98 - C98
[23] Self-Aligned Block and Fully Self-Aligned Via for iN5 Metal 2 Self-Aligned Quadruple Patterning
Vincent, Benjamin
Franke, Joern-Holger
Juncker, Aurelie
Lazzarino, Frederic
Murdoch, Gayle
Halder, Sandip
Ervin, Joseph
EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY IX, 2018, 10583
[24] Self-ordering of CoSi2 precipitates and epitaxial layer growth of CoSi2 on Si(100)
Mantl, S
Hacke, M
Bay, HL
Kappius, L
Mesters, S
THIN SOLID FILMS, 1998, 321 : 251 - 255
[25] Device with a self-aligned microgap for studying microscale flows
Yao, DG
Xie, Z
Zou, Q
REVIEW OF SCIENTIFIC INSTRUMENTS, 2005, 76 (05):
[26] CHARACTERIZATION OF A SELF-ALIGNED COBALT SILICIDE PROCESS
MORGAN, AE
BROADBENT, EK
DELFINO, M
COULMAN, B
SADANA, DK
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : 925 - 935
[27] FORMATION AND CHARACTERIZATION OF EPITAXIAL COSI2, ON SI(001)
LAVIA, F
SPINELLA, C
READER, AH
DUCHATEAU, JPWB
HAKVOORT, RA
VANVEEN, A
APPLIED SURFACE SCIENCE, 1993, 73 : 108 - 116
[28] CHARACTERIZATION OF LIGHTLY DOPED DRAIN (LDD) DEVICE FABRICATED WITH SELF-ALIGNED TITANIUM DISILICIDE
LAI, FS
DHONG, SH
PETRILLO, EJ
SUN, YC
POLCARI, MR
TING, CY
TAUR, Y
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) : C470 - C470
[29] COMPARISON OF SELF-ALIGNED SILICIDE TECHNOLOGIES FOR SHALLOW COSI2-CONTACTS IN VLSI-DEVICES
SCHAFFER, C
DEPTA, D
NIEWOHNER, L
MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 669 - 672
[30] LOW-TEMPERATURE PROCESSING OF SHALLOW JUNCTIONS USING EPITAXIAL AND POLYCRYSTALLINE COSI2
JONES, EC
CHEUNG, NW
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (07) : 863 - 873

← 1 2 3 4 5 →