Self-aligned CoSi2 for 0.18 μm and below

被引：41
|
作者：
Maex, K [1 ]
Lauwers, A
Besser, P
Kondoh, E
de Potter, M
Steegen, A
机构：
[1] IMEC, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, INSYS, Louvain, Belgium
[3] Adv Micro Devices, Berkeley, CA 94720 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 07期
关键词：
D O I：
10.1109/16.772509
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
CoSi2 is being used commonly for the advanced IC technologies, There are several process choices to be made for the formation of a high yielding and reproducible silicide, In this paper the various CoSi2 technologies will be discussed. The scalability of the process of record, the Co/Ti(cap) process will be presented for 0.18 mu m and below.
引用
收藏
页码：1545 / 1550
页数：6
相关论文
共 50 条
  • [1] PROCESSING AND CHARACTERIZATION OF A PBT DEVICE USING SELF-ALIGNED COSI2
    HATZIKONSTANTINIDOU, S
    NILSSON, HE
    FROJDH, C
    PETERSSON, CS
    KAPLAN, W
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (12) : 2272 - 2277
  • [2] A SELF-ALIGNED COSI2 INTERCONNECTION AND CONTACT TECHNOLOGY FOR VLSI APPLICATIONS
    VANDENHOVE, L
    WOLTERS, R
    MAEX, K
    DEKEERSMAECKER, RF
    DECLERCK, GJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (03) : 554 - 561
  • [3] APPLICATION OF SELF-ALIGNED COSI2 INTERCONNECTION IN SUBMICROMETER CMOS TRANSISTORS
    BROADBENT, EK
    IRANI, RF
    MORGAN, AE
    MAILLOT, P
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2440 - 2446
  • [4] Manufacturing enhancements for COSi2 self-aligned silicide at the 0.12-μm CMOS technology node
    Chen, YN
    Lippitt, MW
    Chew, HZ
    Moller, WM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (10) : 2120 - 2125
  • [5] SELF-ALIGNED CoSi2 INTERCONNECTION AND CONTACT TECHNOLOGY FOR VLSI APPLICATIONS.
    Van den hove, Luc
    Wolters, Rob
    Maex, Karen
    De Keersmaecker, Roger F.
    Declerck, Gilbert J.
    IEEE Transactions on Electron Devices, 1987, ED-34 (03) : 554 - 561
  • [6] COMPARISON OF SELF-ALIGNED SILICIDE TECHNOLOGIES BASED ON CoSi2 AND TiSi2.
    van den Hove, L.
    Wolters, R.
    Maex, K.
    De Keersmaecker, R.
    Declerck, G.
    Vide, les Couches Minces, 1987, 42 (236): : 111 - 113
  • [7] STRUCTURAL INTEGRITY AND THERMAL-STABILITY OF TIN/COSI2 USED AS LOCAL INTERCONNECT IN A SELF-ALIGNED COSI2 PROCESS
    HEGDE, RI
    JONES, RE
    KAUSHIK, VS
    TOBIN, PJ
    APPLIED SURFACE SCIENCE, 1991, 52 (1-2) : 59 - 69
  • [8] SURFACE COSI2 LAYERS BY MODERATE DOSE COBALT IMPLANTATION FOR SELF-ALIGNED CONTACTS
    MASZARA, WP
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (03) : 1248 - 1252
  • [9] MESOSCOPIC SILICON COUPLED SUPERCONDUCTING JUNCTIONS OF COSI2 FORMED IN A SELF-ALIGNED PROCESS
    HILBRANDIE, GR
    BAKKER, SJM
    VANDERDRIFT, E
    ROUSSEEUW, BAC
    KLAPWIJK, TM
    RADELAAR, S
    MICROELECTRONIC ENGINEERING, 1994, 23 (1-4) : 445 - 448
  • [10] FABRICATION OF FINE PATTERN OF COSI2 ON SI SUBSTRATE BY SELF-ALIGNED MBE GROWTH
    OHSHIMA, T
    NAKAMURA, N
    NAKAGAWA, K
    MIYAO, M
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 41 - 42
12345