共 50 条
- [1] MECHANISM OF FLOW OF PHOTOCURRENT IN SURFACE-BARRIER METAL GERMANIUM DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (11): : 1348 - 1350
- [2] SURFACE-BARRIER GOLD-GALLIUM ARSENIDE JUNCTIONS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1968, (07): : 89 - &
- [4] THIN MULTILAYER GALLIUM ARSENIDE-METAL CONTACTS INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1966, (06): : 1472 - +
- [5] DIFFERENTIAL PHOTO EFFECTS IN GALLIUM ARSENIDE-METAL JUNCTIONS INFRARED PHYSICS, 1969, 9 (01): : 21 - &
- [6] SURFACE-BARRIER JUNCTIONS IN GALLIUM ARSENIDE AND ROLE OF TAMM STATES IN THEIR FORMATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (05): : 775 - &
- [7] CHARACTERISTICS OF SOME EUTECTIC GALLIUM ARSENIDE-METAL ALLOYS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1969, (10): : 158 - &
- [8] SURFACE-BARRIER INSTABILITY OF THE CURRENT IN GALLIUM-ARSENIDE SCHOTTKY-BARRIER STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (02): : 223 - 224
- [9] ELECTRICAL CHARACTERISTICS OF SURFACE-BARRIER NICKEL-BARIUM ARSENIDE DIODES IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1967, (11): : 86 - &