THIN MULTILAYER GALLIUM ARSENIDE-METAL CONTACTS

被引：0
|
作者：
GOLDBERG, YA
NASLEDOV, DN
TSARENKOV, BV
机构：
来源：
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR | 1966年 / 06期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1472 / +
页数：1
相关论文
共 50 条
  • [1] DIFFERENTIAL PHOTO EFFECTS IN GALLIUM ARSENIDE-METAL JUNCTIONS
    VIEHMANN, W
    INFRARED PHYSICS, 1969, 9 (01): : 21 - &
  • [2] CHARACTERISTICS OF SOME EUTECTIC GALLIUM ARSENIDE-METAL ALLOYS
    MISIK, AM
    VYATKINA, AV
    NOVIKOV, EN
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1969, (10): : 158 - &
  • [3] Metal contacts to gallium arsenide
    Barnard, WO
    Myburg, G
    Auret, FD
    Goodman, SA
    Meyer, WE
    JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (11) : 1695 - 1702
  • [4] EFFECT OF EXCITONS ON PHOTOCURRENT SPECTRUM OF SURFACE-BARRIER DIODES OF GALLIUM ARSENIDE-METAL
    KRAVCHENKO, AF
    PAKHANOV, NA
    TEREKHOV, AS
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1978, 42 (06): : 1191 - 1195
  • [5] DAMAGE INDUCED DEGRADATION OF METAL CONTACTS ON GALLIUM-ARSENIDE
    EJIMANYA, J
    MORGAN, DV
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (01): : K87 - K92
  • [6] OHMIC CONTACTS TO GALLIUM ARSENIDE
    DURAEV, VP
    KUBETSKII, GA
    PUGACH, MK
    SHVEIKIN, VI
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1968, (02): : 469 - +
  • [7] OHMIC CONTACTS ON GALLIUM ARSENIDE
    FREMUNT, R
    SVOBODA, V
    CESKOSLOVENSKY CASOPIS PRO FYSIKU SEKCE A, 1970, 20 (01): : 42 - &
  • [8] METALLIC CONTACTS FOR GALLIUM ARSENIDE
    PAOLA, CR
    SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1189 - +
  • [9] NONRECTIFYING CONTACTS ON GALLIUM ARSENIDE
    KONOPLYA, LN
    KRAVCHEN.AF
    SIROTKIN.VP
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1965, (03): : 728 - &
  • [10] OHMIC CONTACTS TO GALLIUM-ARSENIDE OBTAINED BY CONDENSATION OF METAL PLASMA
    AKIMOVA, AN
    LISICHEN.VI
    POGORELY.VA
    KOSTYLEV, SA
    PRIVALOV, VN
    PRIBORY I TEKHNIKA EKSPERIMENTA, 1972, (03): : 243 - &
12345