EFFECT OF EXCITONS ON PHOTOCURRENT SPECTRUM OF SURFACE-BARRIER DIODES OF GALLIUM ARSENIDE-METAL

被引：0

作者：

KRAVCHENKO, AF

PAKHANOV, NA

TEREKHOV, AS

机构：

来源：

IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA | 1978年 / 42卷 / 06期

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D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1191 / 1195

页数：5

共 50 条

[21] SURFACE-BARRIER STRUCTURES ON GALLIUM ANTIMONIDE.
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Berman, L.S.
Vul', A.Ya.
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1977, 11 (10): : 1109 - 1110
[22] PHOTOLUMINESCENCE SPECTRUM OF BOUND EXCITONS IN INDIUM PHOSPHIDE AND GALLIUM ARSENIDE
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TAYLOR, LL
ASHEN, DJ
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MULLIN, JB
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[23] TUNNEL-TYPE CURRENT IN SURFACE-BARRIER STRUCTURES MADE OF LIGHTLY DOPED GALLIUM-ARSENIDE
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[24] PERFORMANCE OF GAAS SURFACE-BARRIER DETECTORS MADE FROM HIGH-PURITY GALLIUM-ARSENIDE
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[25] PHOTORESPONSE CHARACTERISTICS OF EXTENDED SURFACE-BARRIER DIODES
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[26] PRESSURE SENSITIVITY OF SURFACE-BARRIER SEMICONDUCTOR DIODES
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POKALYAKIN, VI
POLYAKOVA, AL
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SOVIET PHYSICS ACOUSTICS-USSR, 1974, 20 (03): : 268 - 270
[27] GALLIUM-ARSENIDE DUAL SCHOTTKY-BARRIER DIODES
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[28] GALLIUM-ARSENIDE SURFACE BARRIER DETECTORS
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[29] PHOTOEFFECTS IN METAL-INSULATOR-GALLIUM ARSENIDE DIODES
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[30] PECULIARITIES OF SPECTRAL DEPENDENCES OF PHOTOCURRENT IN SILICON SURFACE-BARRIER STRUCTURES
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