共 50 条
- [41] MECHANISM OF THE STRAIN SENSITIVITY OF GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (07): : 818 - 820
- [42] HIGH-BURNOUT GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES JOURNAL OF SCIENCE AND TECHNOLOGY, 1973, 40 (03): : 126 - 131
- [43] GALLIUM ARSENIDE SURFACE BARRIER DIODE AS CHARGED PARTICLE SPECTROMETER NUCLEAR INSTRUMENTS & METHODS, 1966, 44 (01): : 145 - +
- [44] EFFECT OF ELECTRON IRRADIATION ON PARAMETERS OF GALLIUM ARSENIDE PULSE DIODES IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1970, (04): : 109 - &
- [45] EFFECT OF SURFACE TREATMENT ON MICROHARDNESS OF GALLIUM ARSENIDE INDUSTRIAL LABORATORY, 1969, 35 (08): : 1165 - +
- [46] LONGITUDINAL SURFACE-BARRIER PHOTOVOLTAIC EFFECT IN GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (12): : 2091 - +
- [47] Effect of gamma irradiation on photoconversion characteristics of metal/gallium arsenide barrier structures with textured interface Technical Physics, 2002, 47 : 698 - 702
- [48] INFLUENCE OF EXCITON EFFECTS ON PHOTO-EMF SPECTRUM OF AL-N-GAS AS SURFACE-BARRIER DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (04): : 462 - 463