PHOTOCONDUCTIVITY OF STRONGLY COMPENSATED N-TYPE INSB AT MILLIMETER AND SUBMILLIMETER WAVELENGTHS

被引：0

作者：

AFINOGENOV, VM ^{[1
]}

TRIFONOV, VI ^{[1
]}

机构：

[1] ACAD SCI USSR, RADIO ENGN & ELECTR INST, MOSCOW, USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1099 / 1105

页数：7

共 50 条

[21] NEGATIVE PHOTOCONDUCTIVITY OF STRONGLY COMPENSATED N-TYPE GAAS AT LOW-TEMPERATURES
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[22] INVESTIGATION OF TEMPERATURE DEPENDENCE OF DETECTION PROPERTIES OF N-TYPE INSB IN MILLIMETER AND SUBMILLIMETER BANDS
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[24] SPECTRAL RESPONSE OF N-TYPE INSB IN SUBMILLIMETER RANGE
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[29] NATURE OF SUBMILLIMETER PHOTOCONDUCTIVITY IN N-INSB
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[30] INVESTIGATION OF INFULUENCE OF IMPURTIES AND A MAGNETIC FIELD ON DETECTION PROPERTIES OF N-TYPE INSB IN MILLIMETER AND SUBMILLIMETER RANGES
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