PHOTOCONDUCTIVITY OF STRONGLY COMPENSATED N-TYPE INSB AT MILLIMETER AND SUBMILLIMETER WAVELENGTHS

被引：0
|
作者：
AFINOGENOV, VM [1 ]
TRIFONOV, VI [1 ]
机构：
[1] ACAD SCI USSR, RADIO ENGN & ELECTR INST, MOSCOW, USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 07期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
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页码：1099 / 1105
页数：7
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