CHANGES IN THE STATIC CONDUCTIVITY OF n-TYPE InSb UNDER ESR CONDITIONS AT SUBMILLIMETER WAVELENGTHS.

被引：0

作者：

Gershenzon, E.M.

Fogel'son, M.S.

Khalitov, V.Yu.

机构：

来源：

Soviet physics. Semiconductors | 1982年 / 16卷 / 09期

关键词：

Compendex;

D O I：

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学科分类号：

摘要：

SEMICONDUCTING INDIUM COMPOUNDS

引用

页码：992 / 995

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[1] CHANGES IN THE STATIC CONDUCTIVITY OF N-TYPE INSB UNDER ELECTRON-SPIN-RESONANCE CONDITIONS AT SUBMILLIMETER WAVELENGTHS
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[2] MECHANISM OF CHANGES IN STATIC RESISTIVITY OF N-TYPE GE AND N-TYPE INSB UNDER ESR CONDITIONS
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[3] ELECTRON-SPIN RESONANCE IN N-TYPE INSB AT SUBMILLIMETER WAVELENGTHS
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[4] PHOTOCONDUCTIVITY OF STRONGLY COMPENSATED N-TYPE INSB AT MILLIMETER AND SUBMILLIMETER WAVELENGTHS
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[5] SPECTRAL RESPONSE OF N-TYPE INSB IN SUBMILLIMETER RANGE
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[6] SUBMILLIMETER PHOTOCONDUCTIVITY OF WEAKLY COMPENSATED N-TYPE INSB
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[7] PHOTOCONDUCTIVITY OF N-TYPE INSB UNDER ELECTRON HEATING CONDITIONS
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[8] ELECTRICAL CONDUCTIVITY IN N-TYPE INSB UNDER STRONG ELECTRIC FIELD
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[9] NONOHMIC HOPPING CONDUCTIVITY OF N-TYPE INSB
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[10] INFLUENCE OF BACKGROUND ILLUMINATION ON THE SUBMILLIMETER PHOTOCONDUCTIVITY OF N-TYPE INSB
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