CHANGES IN THE STATIC CONDUCTIVITY OF n-TYPE InSb UNDER ESR CONDITIONS AT SUBMILLIMETER WAVELENGTHS.

被引：0

作者：

Gershenzon, E.M.

Fogel'son, M.S.

Khalitov, V.Yu.

机构：

来源：

Soviet physics. Semiconductors | 1982年 / 16卷 / 09期

关键词：

Compendex;

D O I：

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学科分类号：

摘要：

SEMICONDUCTING INDIUM COMPOUNDS

引用

页码：992 / 995

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[21] LINE WIDTH OF ESR AND SPIN-LATTICE RELAXATION IN N-TYPE INSB
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[22] FREE CARRIER FARADAY EFFECT IN N-TYPE INSB WITH A SUBMILLIMETER-WAVE LASER
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[23] INVESTIGATION OF TEMPERATURE DEPENDENCE OF DETECTION PROPERTIES OF N-TYPE INSB IN MILLIMETER AND SUBMILLIMETER BANDS
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[24] SUBMILLIMETER PHOTOCONDUCTIVITY OF N-TYPE INSB AT T=4.2-77-DEGREES-K
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[28] TEMPERATURE ELECTRIC INSTABILITY OF N-TYPE INSB IN A STATIC ELECTRIC-FIELD
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[29] ELECTRICAL CONDUCTIVITY IN AN N-TYPE SURFACE INVERSION LAYER OF INSB AT LOW TEMPERATURE
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