共 50 条
- [41] ELECTRICAL CONDUCTIVITY AND HALL-EFFECT AT LOW-TEMPERATURES IN STRONGLY COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1084 - 1091
- [44] EFFECT OF 0.2-8 MM ELECTROMAGNETIC RADIATION ON ELECTRICAL CONDUCTIVITY OF N-TYPE INSB AT HELIUM TEMPERATURES SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (02): : 350 - +
- [45] MICROWAVE CONDUCTION IN N-TYPE GERMANIUM UNDER HOT ELECTRON CONDITIONS PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 90 (568P): : 427 - &
- [46] INFLUENCE OF AN EXTERNAL STATIC MAGNETIC-FIELD ON THE THERMAL-ELECTRIC INSTABILITY IN N-TYPE INSB SUBJECTED TO A STATIC ELECTRIC-FIELD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (08): : 943 - 945
- [47] Variation of the Fermi level in n-type microcrystalline silicon by electron bombardment and successive annealing: ESR and conductivity studies PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, 2010, 7 (3-4): : 654 - 657
- [50] TEMPERATURE-DEPENDENCE OF THE HOPPING CONDUCTIVITY OF N-TYPE INSB (DEVIATION FROM THE T-1/4 LAW) SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (01): : 53 - 55