共 50 条
- [31] CONTRIBUTION OF IMPURITY STATES TO ELECTRICAL CONDUCTIVITY OF N-TYPE INSB AT LOW TEMPERATURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (01): : 159 - &
- [32] MECHANISM OF THE EFFECT OF MICROWAVES ON THE ELECTRICAL CONDUCTIVITY OF N-TYPE INSB AT LOW TEMPERATURES SOVIET PHYSICS-SOLID STATE, 1964, 5 (08): : 1724 - 1726
- [33] INVESTIGATION OF INFULUENCE OF IMPURTIES AND A MAGNETIC FIELD ON DETECTION PROPERTIES OF N-TYPE INSB IN MILLIMETER AND SUBMILLIMETER RANGES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (06): : 702 - +
- [34] MAGNETOACOUSTIC EFFECTS IN N-TYPE INSB - MAGNETIC FREEZEOUT AND HOPPING CONDUCTIVITY AT LOW-TEMPERATURES PHYSICAL REVIEW B, 1991, 43 (05): : 4125 - 4134
- [35] FEASIBILITY OF INVERSION OF THE POPULATION OF SPIN LANDAU SUBLEVELS IN N-TYPE INSB SUBJECTED TO HIGH-INTENSITY SUBMILLIMETER EXCITATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (06): : 659 - 661
- [36] INFLUENCE OF A STRONG LONGITUDINAL STATIC ELECTRIC-FIELD ON FREE CARRIER FARADAY-EFFECT IN AN N-TYPE INSB AT ROOM-TEMPERATURE AT SUBMILLIMETER WAVE FREQUENCIES INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1981, 2 (01): : 131 - 147
- [38] POLARIZATION OF THE LUMINESCENCE EMITTED BY N-TYPE INSB IN A STRONG MAGNETIC-FIELD UNDER 2-PHOTON PUMPING CONDITIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (04): : 443 - 447
- [40] INFLUENCE OF THE ELECTRIC FIELD ON THE ELECTRICAL CONDUCTIVITY, HALL COEFFICIENT, AND MAGNETORESISTANCE OF N-TYPE INSB AT LOW TEMPERATURES SOVIET PHYSICS-SOLID STATE, 1960, 2 (05): : 729 - 733