CHARGE PUMPING MEMORY WITH SOS-MOS TRANSISTORS

被引：1

|

作者：

SASAKI, N

NAKANO, M

IWAI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S1.155

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：155 / 160

页数：6

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