CHARGE PUMPING MEMORY WITH SOS-MOS TRANSISTORS

被引：1
|
作者：
SASAKI, N
NAKANO, M
IWAI, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷
关键词：
D O I：
10.7567/JJAPS.19S1.155
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：155 / 160
页数：6
相关论文
共 50 条
  • [41] THE MULTISTABLE CHARGE-CONTROLLED MEMORY EFFECT IN SOI MOS-TRANSISTORS AT LOW-TEMPERATURES
    TACK, MR
    GAO, M
    CLAEYS, CL
    DECLERCK, GJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (05) : 1373 - 1382
  • [42] Characterization and Modeling of Single Charge Trapping in MOS Transistors
    Waltl, Michael
    2019 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW), 2019, : 69 - 77
  • [43] EFFECT OF ELECTRON TRAPPING ON THE PERFORMANCE OF SHORT-CHANNEL MOS-BULK AND MOS-SOS TRANSISTORS
    SUN, E
    ALDERS, B
    FORBES, L
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1849 - 1849
  • [44] Extraction of the Si-SiO2 interface trap layer parameters in MOS transistors using a new charge pumping analysis
    Maneglia, Y
    Bauza, D
    ICMTS 1998: PROCEEDINGS OF THE 1998 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 1998, : 201 - 205
  • [45] In-depth exploration of Si-SiO[sb 2] interface traps in MOS transistors using the charge pumping technique
    IEEE Trans Electron Devices, 12 (2262-2266):
  • [46] ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS-TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE
    BELLENS, R
    HEREMANS, P
    GROESENEKEN, G
    MAES, HE
    JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 651 - 655
  • [47] CHARGE PUMPING AND LOW-FREQUENCY NOISE IN MOS STRUCTURES
    LEUENBERGER, F
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 8 (02): : 545 - +
  • [48] Charge pumping analysis of radiation effects in LOCOS parasitic transistors
    Flament, O
    Autran, JL
    Paillet, P
    Roche, P
    Faynot, O
    Truche, R
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1997, 44 (06) : 1930 - 1938
  • [49] The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping
    Habersat, D. B.
    Lelis, A. J.
    McGarrity, J. M.
    McLean, F. B.
    Potbhare, S.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 743 - +
  • [50] Charge Pumping revisited - the benefits of an optimized constant base level charge pumping technique for MOS-FET analysis
    Aichinger, T.
    Nelhiebel, M.
    2007 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2007, : 63 - 69
12345