INFLUENCE OF THE BULK ELECTRODE ON THE CHARACTERISTICS AND THE CHANNEL NOISE OF SOS-MOS TRANSISTORS

被引：1

|

作者：

RIGAUD, D

TOUBOUL, A

SODINI, D

LOPEZ, JC

LECOY, G

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1980年 / 15卷 / 05期

关键词：

D O I：

10.1051/rphysap:01980001505093700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：937 / 940

页数：4

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