TRANSMISSION ELECTRON-MICROSCOPE STUDY OF LASER ANNEALING OF ION DAMAGE IN SILICON AND GALLIUM-ARSENIDE

被引：3
|
作者：
NARAYAN, J
WHITE, CW
YOUNG, RT
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 47卷 / 1-4期
关键词：
D O I：
10.1080/00337578008209205
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：167 / 170
页数：4
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