TRANSMISSION ELECTRON-MICROSCOPE STUDY OF LASER ANNEALING OF ION DAMAGE IN SILICON AND GALLIUM-ARSENIDE

被引：3

作者：

NARAYAN, J

WHITE, CW

YOUNG, RT

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 47卷 / 1-4期

关键词：

D O I：

10.1080/00337578008209205

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：167 / 170

页数：4

共 50 条

[21] TRANSMISSION ELECTRON-MICROSCOPE STUDY OF ION-BEAM ANNEALING EFFECTS OF ION-IMPLANTED AND EVAPORATED AMORPHOUS-SILICON
CHEN, LJ
WU, YJ
YANG, YC
HSIEH, KP
LIN, MS
HUANG, RS
JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3304 - 3309
[22] GALLIUM-ARSENIDE PHOTOCATHODE FOR THE FREE-ELECTRON LASER
STOTLAR, SC
SPRINGER, RW
SHERWOOD, B
CORDI, R
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 540 : 251 - 260
[23] ELECTRON-MICROSCOPY STUDY OF EFFECTS OF ANNEALING ON DEFECT STRUCTURE OF HEAVILY SILICON-DOPED GALLIUM-ARSENIDE
NARAYANAN, GH
KACHARE, AH
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02): : 657 - 669
[24] ION DAMAGE TO SILICON-CRYSTALS INSIDE AN ELECTRON-MICROSCOPE
URBAN, K
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (01): : 213 - 218
[25] ION IRRADIATION DAMAGE OF SILICON IN TRANSMISSION ELECTRON MICROSCOPE
HILL, MJ
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 8 (01): : 199 - &
[26] STUDY OF THE CRYSTALLINE-STRUCTURE AND OF THE COMPOSITION OF PULVERIZED GALLIUM-ARSENIDE, WITH OR WITHOUT LASER ANNEALING
ALIMOUSSA, L
CARCHANO, H
FASSIFIHRI, A
LALANDE, F
LOUSSIER, R
JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 341 - 346
[27] LASER-BASED STRUCTURE STUDIES OF SILICON AND GALLIUM-ARSENIDE
CROOK, GE
STREETMAN, BG
IEEE CIRCUITS & DEVICES, 1986, 2 (01): : 25 - 31
[28] ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE
SHAH, NJ
AHMED, H
LEIGH, PA
APPLIED PHYSICS LETTERS, 1981, 39 (04) : 322 - 324
[29] ELECTRICAL ACTIVATION BEHAVIOR OF ION-IMPLANTED SILICON IN GALLIUM-ARSENIDE DURING RAPID THERMAL ANNEALING
DESOUZA, JP
SADANA, DK
HOVEL, HJ
ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 495 - 499
[30] STUDY OF A MULTIBEAM GALLIUM-ARSENIDE INJECTION LASER AMPLIFIER
KURBATOV, LN
BYSTROVA, LV
SHAKHIDZHANOV, SS
KISELEV, AA
KATAYEV, AG
DEMIDOV, YP
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1971, 16 (04): : 702 - +

← 1 2 3 4 5 →