ELECTRON-MICROSCOPY STUDY OF EFFECTS OF ANNEALING ON DEFECT STRUCTURE OF HEAVILY SILICON-DOPED GALLIUM-ARSENIDE

被引：28

作者：

NARAYANAN, GH ^{[1
]}

KACHARE, AH ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 26卷 / 02期

关键词：

D O I：

10.1002/pssa.2210260230

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：657 / 669

页数：13

共 50 条

[1] A STUDY OF THE EFFECTS OF ANNEALING, ZINC DIFFUSION AND COPPER DIFFUSION ON THE DEFECT STRUCTURE OF SILICON-DOPED GALLIUM-ARSENIDE
HUTCHINSON, PW
BALL, RK
JOURNAL OF MATERIALS SCIENCE, 1982, 17 (02) : 406 - 416
[2] LUMINESCENCE OF SILICON-DOPED EPITAXIAL GALLIUM-ARSENIDE
ARNAUDOV, BG
BYKOVSKII, VA
DOMANEVSKII, DS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 134 - 135
[3] ELECTRON MOBILITY IN HEAVILY DOPED GALLIUM-ARSENIDE
STEVENS, EH
YEE, SS
JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) : 715 - 722
[4] THE EFFECT OF IMPLANTATION CONDITIONS AND ACTIVATE ANNEALING ON THE STRUCTURE OF SILICON-DOPED AND SELENIUM-DOPED GALLIUM-ARSENIDE PLATES
BUBLIK, VT
EVGENEV, SB
KALININ, AA
MILVIDSKII, MG
KRISTALLOGRAFIYA, 1995, 40 (01): : 128 - 136
[5] DEFECT REACTIONS BY HEAT-TREATMENT OF HEAVILY SILICON DOPED GALLIUM-ARSENIDE
OKADA, Y
FUJII, K
ORITO, F
MUTO, S
JOURNAL OF APPLIED PHYSICS, 1993, 73 (04) : 1675 - 1680
[6] LUMINESCENCE OF EPITAXIAL GALLIUM-ARSENIDE HEAVILY DOPED WITH SILICON
KOVALENKO, VF
PROKHOROVICH, AV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (11): : 1333 - 1334
[7] MECHANISM OF COMPENSATION IN HEAVILY SILICON-DOPED GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY
MAGUIRE, J
MURRAY, R
NEWMAN, RC
BEALL, RB
HARRIS, JJ
APPLIED PHYSICS LETTERS, 1987, 50 (09) : 516 - 518
[8] DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE
GREINER, ME
GIBBONS, JF
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5181 - 5191
[9] ON SILICON-DOPED GALLIUM-ARSENIDE UNDER HYDROSTATIC-PRESSURE
POTHIRAJ, R
RAMACHANDRAN, K
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1994, 181 (02): : K45 - K48
[10] EPD INVESTIGATION IN LEC-GROWN SILICON-DOPED GALLIUM-ARSENIDE
FORNARI, R
PAORICI, C
ZANOTTI, L
CRYSTAL RESEARCH AND TECHNOLOGY, 1983, 18 (02) : 157 - 164

← 1 2 3 4 5 →