ELECTRON-MICROSCOPY STUDY OF EFFECTS OF ANNEALING ON DEFECT STRUCTURE OF HEAVILY SILICON-DOPED GALLIUM-ARSENIDE

被引：28

作者：

NARAYANAN, GH ^{[1
]}

KACHARE, AH ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 26卷 / 02期

关键词：

D O I：

10.1002/pssa.2210260230

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：657 / 669

页数：13

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