ELECTRON-MICROSCOPY STUDY OF EFFECTS OF ANNEALING ON DEFECT STRUCTURE OF HEAVILY SILICON-DOPED GALLIUM-ARSENIDE

被引：28
|
作者：
NARAYANAN, GH [1 ]
KACHARE, AH [1 ]
机构：
[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 26卷 / 02期
关键词：
D O I：
10.1002/pssa.2210260230
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：657 / 669
页数：13
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