A STUDY OF THE EFFECTS OF ANNEALING, ZINC DIFFUSION AND COPPER DIFFUSION ON THE DEFECT STRUCTURE OF SILICON-DOPED GALLIUM-ARSENIDE

被引：17
|
作者：
HUTCHINSON, PW [1 ]
BALL, RK [1 ]
机构：
[1] UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
来源：
JOURNAL OF MATERIALS SCIENCE | 1982年 / 17卷 / 02期
关键词：
D O I：
10.1007/BF00591476
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：406 / 416
页数：11
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