A STUDY OF THE EFFECTS OF ANNEALING, ZINC DIFFUSION AND COPPER DIFFUSION ON THE DEFECT STRUCTURE OF SILICON-DOPED GALLIUM-ARSENIDE

被引：17
|
作者：
HUTCHINSON, PW [1 ]
BALL, RK [1 ]
机构：
[1] UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
来源：
JOURNAL OF MATERIALS SCIENCE | 1982年 / 17卷 / 02期
关键词：
D O I：
10.1007/BF00591476
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：406 / 416
页数：11
相关论文
共 50 条
  • [21] EPD INVESTIGATION IN LEC-GROWN SILICON-DOPED GALLIUM-ARSENIDE
    FORNARI, R
    PAORICI, C
    ZANOTTI, L
    CRYSTAL RESEARCH AND TECHNOLOGY, 1983, 18 (02) : 157 - 164
  • [22] DIFFUSION LENGTH OF HOLES IN LIGHTLY DOPED GALLIUM-ARSENIDE
    BERGMANN, YV
    DANILCHENKO, VG
    KOROLKOV, VI
    NIKITIN, VG
    STEPANOVA, MN
    TRETYAKOV, DN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 933 - 934
  • [23] ELECTRICAL-PROPERTIES OF EPITAXIAL SILICON-DOPED GALLIUM-ARSENIDE FILMS
    MILVIDSKII, MG
    SOLOVEVA, EV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (03): : 325 - 328
  • [24] A NEW ETCH FEATURE IN GERMANIUM-DOPED AND SILICON-DOPED LEC GALLIUM-ARSENIDE
    HOPE, DAO
    COCKAYNE, B
    JOURNAL OF CRYSTAL GROWTH, 1984, 67 (02) : 153 - 167
  • [25] EFFECT OF NEUTRON-IRRADIATION ON DIFFUSION OF ZINC IN INDIUM ARSENIDE AND GALLIUM-ARSENIDE
    SAVIN, EP
    BOLTAKS, BI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (07): : 1173 - +
  • [26] DISLOCATION-FREE SILICON-DOPED GALLIUM-ARSENIDE GROWN BY LEC PROCEDURE
    FORNARI, R
    PAORICI, C
    ZANOTTI, L
    ZUCCALLI, G
    JOURNAL OF CRYSTAL GROWTH, 1983, 63 (02) : 415 - 418
  • [27] MECHANISM FOR ZINC DIFFUSION IN N-TYPE GALLIUM-ARSENIDE
    KAHEN, KB
    SPENCE, JP
    RAJESWARAN, G
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (04) : 2464 - 2466
  • [28] DIFFUSION OF ZINC AND CADMIUM IN GALLIUM-ARSENIDE IRRADIATED WITH ARSENIC IONS
    GAVRILOV, AA
    KACHURIN, GA
    PRIDACHIN, NB
    SMIRNOV, LS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1455 - 1456
  • [29] DISLOCATIONS AND MICRODEFECTS IN LEC-GROWN SILICON-DOPED GALLIUM-ARSENIDE CRYSTALS
    FRIGERIO, G
    MUCCHINO, C
    WEYHER, JL
    ZANOTTI, L
    PAORICI, C
    JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 685 - 691
  • [30] STUDY OF DIFFUSION OF GALLIUM AND ARSENIC IN GERMANIUM AT GALLIUM-ARSENIDE HETEROEPITAXY
    EPIKTETOVA, LE
    VASILEVA, LP
    DRUZHINKIN, IF
    MOSKOVKIN, VA
    LAVRENTE.LG
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1973, (01): : 93 - 99
12345